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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15090/D Advance Information The RF Line Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz. * Specified 26 Volts, 1490 MHz, Class AB Characteristics Output Power -- 90 Watts (PEP) Gain -- 7.5 dB Min @ 90 Watts (PEP) Collector Efficiency -- 30% Min @ 90 Watts (PEP) Intermodulation Distortion -- -28 dBc Max @ 90 Watts (PEP) * Third Order Intercept Point -- 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 5 Adc * Characterized with Series Equivalent Large-Signal Parameters from 1400-1600 MHz * Characterized with Small-Signal S-Parameters from 1000-2000 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current -- Continuous @ TJ(max) = 150C Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RJC Symbol Min Typ Value 25 60 4 15 250 1.43 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C CASE 375A-01, STYLE 1 90 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON NPN Silicon RF Power Transistor MRF15090 THERMAL CHARACTERISTICS Max 0.70 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, RBE = 100 ) V(BR)CEO V(BR)CES V(BR)CER 25 60 30 28 65 -- -- -- -- Vdc Vdc Vdc (continued) This document contains information on a new product. Specifications and information herein are subject to change without notice. (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF15090 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS -- continued Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)EBO ICES 4 -- 4.8 -- -- 10 Vdc mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) hFE 20 40 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1 MHz) - For Information Only. This Part Is Collector Matched. Cob -- 52 -- pF FUNCTIONAL TESTS (Figure 12) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Input Return Loss (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Gpe 7.5 8.3 -- dB 30 36 -- % IMD -- - 32 - 28 dBc IRL 12 15 -- dB No Degradation in Output Power MRF15090 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 120 Pout , OUTPUT POWER (WATTS) 100 80 60 40 20 0 0 4 12 8 Pin, INPUT POWER (WATTS) 16 VCC = 26 Vdc ICQ = 250 mA f = 1490 MHz Single Tone 7.5 20 8.0 9.0 100 Pin = 15 W G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) Gpe Pout 8.5 80 10 W 60 40 5W VCC = 26 Vdc ICQ = 250 mA Single Tone 20 0 1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 f, FREQUENCY (MHz) Figure 1. Output Power & Power Gain versus Input Power Figure 2. Output Power versus Frequency - 20 IMD, INTERMODULATION DISTORTION (dBc) 3rd Order - 30 5th - 40 7th - 50 VCC = 26 Vdc ICQ = 250 mA f1 = 1490 MHz f2 = 1490.1 MHz 0 20 100 60 80 40 Pout, OUTPUT POWER (WATTS) PEP 120 10 9 G pe , POWER GAIN (dB) 8 7 6 5 4 3 2 1 0 1400 1420 1440 VSWR Pout = 90 W (PEP) VCC = 26 Vdc ICQ = 250 mA Gpe 50 40 30 3.0 2.5 20 2.0 10 1.5 1.0 INPUT VSWR - 60 1460 1480 1500 f, FREQUENCY (MHz) 1520 1540 0 1560 Figure 3. Intermodulation Distortion versus Output Power Figure 4. Performance in Broadband Circuit IMD, INTERMODULATION DISTORTION (dBc) - 20 - 25 - 30 250 mA - 35 - 40 500 mA - 45 - 50 - 55 - 60 0.1 750 mA 1 10 VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz ICQ = 100 mA 10 9 G pe , POWER GAIN (dB) 8 7 6 5 4 3 2 0.1 100 mA 1 10 100 250 mA VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz 500 mA ICQ = 750 mA 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power Figure 6. Power Gain versus Output Power MOTOROLA RF DEVICE DATA MRF15090 3 , COLLECTOR EFFICIENCY (%) TYPICAL CHARACTERISTICS 60 50 Pout , OUTPUT POWER (dBm) G pe , POWER GAIN (dB) 40 30 20 10 0 -10 3rd Order VCC = 24 Vdc IC = 5.0 Adc f1 = 1490 MHz f2 = 1490.1 MHz 15 20 25 30 35 Pin, INPUT POWER (dBm) 40 45 50 Fundamental 8.5 Gpe 8 7.5 7 6.5 6 18 ICQ = 250 mA f1 = 1490 MHz f2 = 1490.1 MHz 22 20 24 26 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) IMD - 20 - 25 - 30 - 35 - 40 28 -15 9 -10 IMD, INTERMODULATION DISTORTION (dBc) - 20 - 30 - 40 10 Figure 7. Class A Third Order Intercept Point Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage 10 I C , COLLECTOR CURRENT (Adc) MTBF FACTOR (HOURS x AMPS2 ) 109 8 MTBF Limited Tflange = 75C 6 Tflange = 100C 4 Breakdown Limited 108 107 2 TJ = 175C 0 0 4 12 20 16 VCE, COLLECTOR VOLTAGE (Vdc) 8 24 106 28 105 100 120 180 220 140 160 200 TJ, JUNCTION TEMPERATURE (C) 240 260 Figure 9. DC Safe Operating Area Figure 10. MTBF Factor versus Junction Temperature The graph above displays calculated MTBF in hours x ampere 2 emitter current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application. MRF15090 4 MOTOROLA RF DEVICE DATA f = 1.4 GHz 1.45 1.5 Zin 1.55 1.6 1.6 ZOL* 1.5 1.55 1.45 Zo = 10 f = 1.4 GHz f (MHz) 1400 1450 1500 1550 1600 Zin () 3.28 + j9.07 3.85 + j10.4 4.55 + j11.4 5.45 + j11.9 6.20 + j12.2 ZOL* () Zin 4.62 + j2.23 4.35 + j3.41 4.08 + j3.60 3.80 + j3.78 3.55 + j3.84 = Input impedance is a balanced base to base measurement. ZOL* = Conjugate of optimum load impedance collector to collector into which the device operates at a given output power, bias current, voltage and frequency. Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 90 Watts (PEP), VCC = 26 Volts, ICQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz Table 1. Common Emitter S-Parameters (for One Side of Push-Pull MRF15090) at VCE = 24 Vdc, IC = 2.5 Adc f MHz 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 S11 |S11| 0.999 0.999 0.994 0.992 0.994 0.986 0.982 0.973 0.957 0.938 0.903 0.857 0.821 0.837 0.872 0.901 0.920 0.940 0.954 0.965 0.971 172 171 170 170 169 168 167 166 164 163 162 163 165 169 170 170 170 169 169 168 167 |S21| 0.164 0.179 0.196 0.216 0.241 0.269 0.306 0.351 0.408 0.483 0.571 0.651 0.673 0.623 0.529 0.437 0.363 0.309 0.265 0.232 0.205 S21 108 103 97 92 86 80 73 66 56 44 29 10 -14 - 37 - 56 -70 - 81 - 90 - 98 -104 -110 |S12| 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.014 0.013 0.011 0.009 0.008 0.007 0.008 0.008 0.009 0.010 S12 72 69 66 63 62 57 51 45 33 22 7 -13 - 40 - 67 -104 -138 -165 173 150 139 132 |S22| 0.957 0.956 0.948 0.940 0.935 0.924 0.915 0.905 0.888 0.876 0.859 0.855 0.877 0.902 0.922 0.931 0.932 0.930 0.932 0.930 0.929 S22 173 172 172 171 171 170 170 170 170 170 171 173 174 174 173 172 171 170 169 169 168 MOTOROLA RF DEVICE DATA MRF15090 5 Vbias R4 + C9 D1 D2 Q2 Vb Q1 R3 VCC Q3 R6 C16 + C18 R7 L6 B3 L8 TL6 C20 Balun 2 Coax 1 C5 TL2 RF Input N1 C1 L2 C3 TL1 C4 L1 C2 L3 B2 TL5 DUT TL3 Balun 1 C6 L5 + C8 R2 C11 C14 C12 C7 B1 R1 C10 C13 + R5 L4 TL4 C15 C22 TL8 C23 RF Output N2 TL10 C26 L10 C24 TL7 L9 B4 L7 + C19 R8 TL9 C25 Vb VCC C17 Coax 2 B1, B2, B3, B4 C1 C2 C3, C4, C23, C24 C5, C6, C22, C25 C7, C8, C20, C21 C9, C10, C11 C12 C13, C14, C18, C19 C15 C16, C17 C26 D1 D2 Ferrite Bead, Ferroxcube 2.7 pF, B Case Chip Capacitor, ATC 0.6-4.0 pF, Variable Capacitor, Johanson 18 pF, B Case Chip Capacitor, ATC 51 pF, Chip Capacitor, Murata Erie 1800 pF, Chip Capacitor, Kemit 100 F, Electrolytic Capacitor, Mallory 5.1 pF, A Case Chip Capacitor, ATC 0.1 F, Chip Capacitor, Kemit 1.1 pF, B Case Chip Capacitor, ATC 470 F, Electrolytic Capacitor, Mallory 0.3 pF, B Case Chip Capacitor, ATC Diode, Motorola (MUR5120T3) Light Emitting Diode, Industrial Devices L1 L2, L3, L8, L9 L4, L5, L6, L7 L10 N1, N2 Q1, Q3 Q2 R1, R2, R7, R8 R3 R4 R5 R6 TL1 to TL10 Board 1 Turn, 24 AWG, 0.042 ID Choke 3 Turn, 20 AWG, 0.126 ID Choke 12 Turns, 22 AWG, 0.140 ID Choke 3 Turns, 24 AWG, 0.046 ID Choke Type N Flange Mount RF Connector, Omni Spectra Transistor, NPN, Motorola (MJD47) Transistor PNP Motorola (BD136) 10 , 1/2 W, Resistor 150 , 1/2 W, Resistor 2 x 66 , 1/8 W, Chip Resistors in Parallel, Rohm 93 , 1/8 W, Chip Resistor, Rohm 22 K, 1/8 W, Chip Resistor, Rohm See Photomaster Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 12. Class AB Test Fixture Electrical Schematic MRF15090 6 MOTOROLA RF DEVICE DATA Vsupply R1 R2 Q3 R17 R10 R3 R7 R11 Coax 1 R15 + C3 C5 B1 B3 C9 C20 TL2 C7 TL1 C13 L1 C8 TL 3 Balun 1 B4 R1 2 R13 Q2 R5 R6 R14 + C2 C4 R16 Q4 R18 VCC + C6 B2 C12 C16 + C18 B8 B6 R20 C24 Coax 2 L3 C10 TL5 DUT C14 TL7 L5 C22 TL9 C23 C25 L6 L2 TL4 TL6 L4 C21 RF Input N1 TL8 RF Output N2 TL10 C11 + C15 C17 R19 B5 B7 Balun 2 C19 + Q1 R9 C1 VCC R4 R8 Vsupply B1, B2, B5, B6 B3, B4, B7, B8 C1, C2, C3, C4 C5, C6, C17, C18 C7, C8, C21, C22 C9, C10, C20, C23 C11, C12, C19, C24 C13 C14 C15, C16 C25 L1 L2, L3, L4, L5 L6 Long Bead, Fair Rite Short Bead, Fair Rite 100 F, Electrolytic Capacitor, Mallory 0.1 F, Chip Capacitor, Kemit 18 pF, B Case Chip Capacitor, ATC 51 pF, Chip Capacitor, Murata Erie 1800 pF, Chip Capacitor, Kemit 4.3 pF, B Case Chip Capacitor, ATC 2.0 pF, B Case Chip Capacitor, ATC 470 F, Electrolytic Capacitor, Mallory 0.6-4 pF Variable Capacitor, Johanson 3 Turns, 24 AWG, 0.046 ID Choke 3 Turns, 20 AWG, 0.126 ID Choke 2 Turns, 24 AWG, 0.042 ID Choke N1, N2 Q1, Q2 Q3, Q4 R1, R6 R2, R5 R3, R4 R7, R8 Type N Flange Mount RF Connector, Omni Spectra Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 , 1/8 W, Chip Resistor, Rohm 500 , 1/4 W, Potentiometer, State of the Art 4.7 , 1/8 W, Chip Resistor, Rohm 2 x 4.7 K, 1/8 W, Chip Resistors in Parallel, Rohm R9, R14 1.0 , 10 W, Resistor, Dale R10, R13 38 , 1 W, Resistor R11, R12 75 , 1/8 W, Chip Resistor, Rohm R15, R16 2 x 10 , 1/8 W, Chip Resistors in Parallel, Rohm R17, R18, R19, R20 4 x 38 , 1/8 W, Chip Resistors in Parallel, Rohm Board Glass Teflon(R), Arlon GX-0300-55-22, r = 2.55 Figure 13. Class A Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF15090 7 PACKAGE DIMENSIONS Q G L 1 2 2 PL 0.25 (0.010) M TB M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K R 5 3 4 -B- D STYLE 1: PIN 1. 2. 3. 4. 5. E H N F -T- A C SEATING PLANE COLLECTOR COLLECTOR BASE BASE EMITTER DIM A B C D E F G H K L N Q R INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.205 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.082 0.097 0.580 0.620 0.435 BSC 0.845 0.875 0.118 0.130 0.390 0.410 MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.21 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.08 2.46 14.73 15.75 11.05 BSC 21.46 22.23 3.00 3.30 9.91 10.41 CASE 375A-01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF15090 8 *MRF15090/D* MRF15090/D MOTOROLA RF DEVICE DATA |
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